Optical determination of interface roughness in multilayered semiconductor structures

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures

The current–voltage characteristics of n poly-Si/SiO2 /p-Si tunnel structures containing nonuniform ultrathin oxide layers are studied using three-dimensional quantum mechanical scattering calculations. We find that, in general, roughness at the Si/SiO2 interface renders the oxide layer more permeable. In the direct-tunneling regime, interface roughness induces lateral localization of wave func...

متن کامل

Theory of Nonlinear s-Polarized Phonon-Polaritons in Multilayered Structures

A theory is presented for the dispersion relations of the nonlinear phonon-polaritons arising when phonons are coupled to the electromagnetic waves in multilayered structures of nonlinear materials. The calculations are applied to a multilayered structure consisting of a thin film surrounded by semi-infinite bounding media where each layer may have a frequency dependent dielectric function and ...

متن کامل

Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers

This paper discusses the concept of enhancing semiconductor laser performance through tailoring of scattering rates of confined polar-optical phonons. Studies of optically pumped intersubband scattering in coupled quantum-well lasers have demonstrated that interface-phonon-assisted transitions are important in such structures; furthermore, simple analytical expressions have been derived that in...

متن کامل

Interface roughness effects on transport in tunnel structures

Direct simulations of interface roughness effects on transport properties of tunnel structures are performed using the planar supercell stack method. The method allows for the inclusion of realistic three-dimensional rough interfacial geometries in transport calculations. For double barrier resonant tunneling structures, we used our method to analyze the effect of roughness at each of the four ...

متن کامل

Optical determination of crystal phase in semiconductor nanocrystals

Optical, electronic and structural properties of nanocrystals fundamentally derive from crystal phase. This is especially important for polymorphic II-VI, III-V and I-III-VI2 semiconductor materials such as cadmium selenide, which exist as two stable phases, cubic and hexagonal, each with distinct properties. However, standard crystallographic characterization through diffraction yields ambiguo...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics B: Lasers and Optics

سال: 1999

ISSN: 0946-2171,1432-0649

DOI: 10.1007/s003400050677